2008. 8. 29 1/3 semiconductor technical data ktc4666 epitaxial planar npn transistor revision no : 4 low noise amplifier application. feature ? high h fe : h fe =600 ?- 3600. ? noise figure : 0.5db(typ.) at f=100khz. maximum rating (ta=25 ? ) dim millimeters a b d e 1. emitter 2. base 3. collector usm 2.00 0.20 1.25 0.15 0.90 0.10 0.3+0.10/-0.05 2.10 0.20 0.65 0.15+0.1/-0.06 1.30 0.00-0.10 0.70 c g h j k l k 1 3 2 e b d a j g c l h mm n n m 0.42 0.10 n 0.10 min + _ + _ + _ + _ + _ electrical characteristics (ta=25 ? ) h rank fe type name marking lot no. t characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =50v, i e =0 - - 0.1 a emitter cut-off current i ebo v eb =8v, i c =0 - - 0.1 a dc current gain h fe (1)(note) v ce =6v, i c =2ma 600 - 3600 h fe (2) v ce =5v, i c =1ma 500 - 3600 h fe (3) v ce =10v, i c =2ma 600 - - collector-emitter saturation voltage v ce(sat) (1) i c =10ma, i b =1ma - 0.05 0.15 v v ce(sat) (2) i c =50ma, i b =5ma - 0.07 0.2 v v ce(sat (3) i c =100ma, i b =10ma - 0.12 0.25 v transition frequency f t v ce =10v, i c =10ma 100 250 - mhz collector output capacitance c ob v cb =10v, i e =0, f=1mhz - 3.5 - pf noise figure nf (1) v ce =6v, i c =0.1ma, f=100khz, rg=10k ? - 0.5 - db nf (2) v ce =6v, i c =0.1ma, f=1khz, rg=10k ? - 0.3 - characteristic symbol rating unit collector-base voltage v cbo 60 v collector-emitter voltage v ceo 50 v emitter-base voltage v ebo 8 v collector current i c 150 ma base current i b 30 ma collector power dissipation p c 200 mw junction temperature t j 150 ? storage temperature range t stg -55 ?- 150 ? note : h fe classification a:600 ?- 1800 , b:1200 ?- 3600 * package mounted on 99.5% alumina 10mm ?? 8mm ?? 0.6mm
2008. 8. 29 2/3 ktc4666 revision no : 4 0 collector current i (ma) c 0 base emitter voltage v (v) be be c i - v 10 dc current gain h fe 3 1 0.3 0.1 collector current i (ma) c h - i collector current i (ma) voltage v (v) 0.1 0.3 0.01 ce(sat) v - i c 3 1 collector emitter voltage v (v) collector current i (ma) 0 0 c ce i - v cce 2468 40 80 120 160 common emitter ta=25 c 400 200 100 80 60 50 40 30 20 i =10 a 0 b fe c 10 30 100 300 30 50 100 300 500 1k 3k 5k common emitter v =6v ce base-emitter saturation collector current i (ma) 0.1 0.3 c 3 1 0.1 be(sat) v - i ce(sat) c 10 30 100 300 0.03 0.05 0.1 0.3 0.5 1 3 common emitter i /i =10 c b ta=100 c ta=25 c ta=-25 c transition frequency f (mhz) emitter current i (ma) e 10 t -0.1 -0.3 -3 -1 f - i be(sat) c voltage v (v) 10 30 100 300 0.3 0.5 1 3 5 10 30 i /i =10 c b common emitter ta=25 c 0.4 0.8 1.2 1.6 40 80 120 160 common emitter v =6v ce ta=100 c ta=25 c ta=-25 c te -10 -30 -100 -300 30 50 100 300 500 1k 3k 5k v =10v ta=25 c cc collector-emitter saturation ta=100 c ta=25 c ta=-25 c
2008. 8. 29 3/3 ktc4666 revision no : 4 0 ciollector power dissipation p c (mw) 0 c p - ta c - v collector-base voltage v cb (v) 0.1 0.3 1 3 1 collector output capacitance c ob (pf) ob cb 10 30 100 3 5 10 30 50 100 i =0 f=1mhz ta=25 c e 25 50 75 100 125 150 175 50 100 150 200 250 ambient temperature ta ( c)
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